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2005～2009

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2009:論文・雜誌・書籍

1. Existing states of hydrogen in steels including various structural factors - experimental approach -
（含有各種組織因子的鋼中氫存在狀態分析的實驗研究）

  • 高井健一*1，鈴木啟史*1
  • *1上智大學理工學部
  • 2009年第1屆鋼鐵材料的革新性高強度、高功能化基板研究開發項目 研討會演講預稿集

2. Detection of hydrogen in neutron-irradiated nickel using positron lifetime spectroscopy

  • C.He*1,T.Yoshiie*1,Q.Xu*1,K.Sato*1,S.Peneva*2,T.D.Troev*2
  • *1 Research Reactor Institute,Kyoto University *2 Institute for Nuclear Research and Nuclear Energy
  • Philosophia Magazine(Eng.), Vol89, No.14, 11 May 2009, 1183-1195

3. Suppression of Cu Oxidation Using Environmentally Friendly Inhibitors under Conditions of High Temperature and High Humidity for Cu/Low-k

  • Makoto Hara, Daisuke Watanabe, Chiharu Kimura, Hidemitsu Aoki, and Takashi Sugino
  • *Division of Electrical, Electronic and Information Engineering, Osaka University
  • Jpn. J. Appl. Phys. 48 (2009) 04C016 (4 pages)

4. Reaction Mechanism of SOFC Anode with Proton Conductor BCY
（加入質子導體BCY的SOFC燃料電極的反應機理）

  • *Kohei Masuda, Katsunori Hanamura
  • Research Center for Carbon Recycling and Energy, Tokyo Institute of Technology
  • 第18屆SOFC研究發表會講演要旨集(159C)

5. High-Quality SiO2 Film Formation below 400℃ by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas

  • Hirokazu Ueda, Yusuke Ohsawa, Yoshinobu Tanaka, Toshihisa Nozawa
  • Tokyo Electron Technology Development Lnstitute Inc.
  • Japanese Journal of Applied Physics 48(2009)

6. Improvement of Dielectric Properties on Deposited Sio2 Caused by Stress Relaxation with Thermal Annealing

  • Mitsuru Sometani*1, Ryu Hasunuma*1*2, Masaaki Ogino*3, Hitoshi Kuribayashi*3, Yoshiyuki Sugahara*3, Kikuo Yamabe*1*2
  • *1)Institute of Applied Physics, University of Tsukuba
  • *2)Tsukuba Research Center for Interdisciplinay Materials Science(TIMS), University of Tsukuba
  • *3)Semiconductor Process R&D Sectioin, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co.,Ltd.,
  • Japanese Journal of Applied Physics 48(2009)

7. Study on thermal stability of Li1-x(NiaMnbCoc)O2
（Ni-Mn-Co三元正極材料的熱穩定性探討）

  • 小西宏明、湯淺豐隆、吉川正則、平野辰巳、寺田尚平、高松大郊；
  • 日立公司日立研究所
  • 第50屆電池討論會（Nov.30-Dec.2，2009）

8. Nature of doped a-Si: H/ c-Si interface recombination

  • Stefaan De Wolf*1, Michio Kondo*2
  • *1)Ecole Polytechnique Federale de Lausanne (EPFL), Photovoltaics and Thin Film Electronics Laboratory, *2)National Institute of Advanced Industrial Science and Technology (AIST)
  • JOURNAL OF APPLIED PHYSICS 105, 103707 (2009)

9. Porous Carbon Obtained by Carbonization of PET Mixed with Basic Magnesium Carbonate: Pore Structure and Pore Creation Mechanism

  • Jacek Przepiorski*1, Justyna Karolczyk*1, Kazuhiro Takeda*2, Tomoki Tsumura*2, Masahiro Toyoda*2 and Antoni W. Morawski*1
  • *1)Institute of Chemical and Environmental Engineering, West Pomeranian University of Technology, *2)Faculty of Engineering, Oita University
  • Ind. Eng. Chem. Res., 2009, 48 (15), pp 7110-7116

2009:學會要旨

1. Hydrogen Desorption Spectra using Thermal Desorption Spectrometer Detected from Low-Temperature
（使用低溫升溫熱脫附質譜儀的氫放出光譜）

  • （學）佐藤勇太*1，（院）藤田圭*1，鈴木啟史*1，高井健一*1，萩原行人*1，石川信行*2
  • 鋼鐵材料的創新高強度，高功能基礎研究開發研究體（JRCM:金屬系材料研究開發中心*1上智大學理工學部*2JFE鋼株式會社鋼研究所
  • 2009年春季鋼鐵協會學會大會要旨（氫脆）CAMP-ISIJ Vol.22（2009）-599

2008:論文・雜誌・書籍

1. LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate

  • Masamichi Suzuki, Takeshi Yamaguchi, Noburu Fukushima, Masato Koyama
  • Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
  • J. Appl. Phys. 103, 034118 (2008); DOI:10.1063/1.2838470 Published 15 February 2008

2. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

  • Saburo Uchida*1, Seigo Takashima*1, Masaru Hori*1, Masanaga Fukasawa*1, Keiji Ohshima*2, Kazunori Nagahata*2, Tetsuya Tatsumi*2
  • *1Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University,
  • 2Process Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
  • J. Appl. Phys. 103, 073303 (2008); DOI:10.1063/1.2891787 Published 7 April 2008

3. Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition

  • Yoshitaka Nagasato, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa
  • Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology
  • Japanese Journal of Applied Physics Vol. 47, No. 1, 2008, pp. 31-34

4. Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

  • Tatsunori Murata, Kazushi Kono, Yoshikazu Tsunemine, Masahiko Fujisawa, Masazumi Matuura, Koyu Asai, Masayuki Kojima
  • Process Technology Development Division, Renesas Technology Corporation
  • Japanese Journal of Applied Physics Vol. 47, No. 4, 2008, pp. 2488-2491

5. Hydrogen Interaction with Single-Walled Carbon Nanotubes

  • Kumiko Yoshihara, Kazuhiro Ishida, Winadda Wongwiriyapan, Satoshi Inoue, Yusuke Okabayashi,Shin-ichi Honda, Yoshihiro Nishimoto*1, Yuji Kuwahara1, Kenjiro Oura*2, and Mitsuhiro Katayama
  • Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University,
  • *1Division of Precision Science and Technology and Applied Physics, Graduate School of Engineering, Osaka University, *2Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University,
  • Applied Physics Express 1 (2008) 094001, May 15, 2008; accepted July 26, 2008; published online August 22, 2008

6. Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

  • Kenji Nomura*1, Toshio Kamiya*1*2, Hiromichi Ohta*1, Masahiro Hirano*1*3, Hideo Hosono*1*2*3,
  • *1)ERATO-SORST, JST, in Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, *2)Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, *3)Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology,
  • APPLIED PHYSICS LETTERS 93, 192107 2008

7. Hydrogen desorption effect on cathodoluminescence of ZnO

  • B.Dierre*1*2, X.L. Yuan*1, T. Ishigaki*3, K. Ueda*4 and T. Sekiguchi*1*2
  • *1)Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), *2)Graduate School of Pure and Applied Sciences, University of Tsukuba, *3)Nano Ceramics Center, National Institute for Materials Science (NIMS), *4)Nano High-Tech Research Center, Graduate School of Engineering, Toyota Technological Institute
  • Superlattices and Microstructures, Volume 45, Issue 4-5, p. 321-325(2008)

8. Approach for detecting localization of inkjet ink components using dynamic-SIMS analysis

  • Masaya Shibatani*1*2, Tsutomu Asakawa*3, Toshiharu Enomae*1, Akira Isogai*1
  • *1)Paper Science Laboratory,Graduate School of Agricultural and Life Sciences,The University of Tokyo, *2)IJ Industrial Applications R&D Department,Production Engineering &Development Div.,Seiko Epson Corporation,
  • *3)Material Analysis &Research Center,R&D Department,Seiko Epson Corporation,Japan
  • Colloids and Surfaces A:Physicochem.Eng.Aspects 326 (2008)61 ‐66

9. In-Line Wafer Level Hermetic Packages for MEMS Variable Capacitor

  • Susumu Obata*1, Michinobu Inoue*1, Takeshi Miyagi*1, Ikuo Mori*1,Yoshiaki
  • Sugizaki*2,Yoshiaki Shimooka*2, Akihiro Kojima*2, Mitsuyoshi Endo*2, Hideki Shibata*2
  • *1)Corporate Manufacturing Engineering Center, Toshiba Corporation.
  • *2) Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation
  • 2008 Electronic Components and Technology Conference (P.163)

2008:學會要旨

1. Hydrogen Desorption Spectra using Thermal Desorption Spectrometer Detected from Low-Temperature
（使用低溫升溫熱脫附質譜儀的氫放出光譜）

  • 佐藤勇太*1，藤田圭*1，鈴木啟史*1，高井健一*1，萩原行人*1，前島邦光*2，宮林延良*2
  • 鋼鐵材料的創新高強度，高功能基礎研究開發研究體（JRCM:（財）金屬系材料研究開發中心）
  • *1上智大學理工系*2電子科學株式會社
  • 2008年秋季鋼鐵協會學會大會要旨（氫脆）CAMP-ISIJ Vol.21（2008）-1375

2. Hydrogen evolution spectra of pure iron including various lattice defects using low-thermal desorption spectrometry
（低溫升溫熱脫附分析法對具有各種晶格缺陷的純鐵的氫釋放光譜）

  • 藤田圭*1，佐藤勇太*1，鈴木啟史*1，高井健一*1，萩原行人*1，
  • 鋼鐵材料的創新高強度，高功能基礎研究開發研究體（JRCM:（財）金屬系材料研究開發中心） 
  • *1上智大學理工學部
  • 2008年秋季鋼鐵協會學會大會要旨（氫脆）CAMP-ISIJ Vol.21（2008）-1376

3. Understanding of Passivation Mechanism in Heterojunction c-Si Solar Cells

  • Michio Kondo*1, Stefaan De Wolf*1*2, and Hiroyuki Fujiwara*1
  • *1)RCPV, AIST, Umezono, Tsukuba, 305-8568, Japan, *2)Institute of Microtechnique, University of Neuchatel
  • Mater. Res. Soc. Symp. Proc. Vol.1066, 2008 Materials Research Society, 1066-A03-01

2007:論文・雜誌・書籍

1. Internal structure transition of spin-on glass by electron beam irradiation

  • Makoto Araki*1, Jun Taniguchi*2, Nobuo Sawada*3, Takayuki Utsumi*1, Iwao Miyamoto*2
  • *1 Department of Electronics and Computer Science,Tokyo University of Science, *2 Department of Applied Electronics,Tokyo University of Science, *3 ESCO Ltd.
  • Applied Surface Science,253,5191-5195(2007)

2. 鈦的特性化和生物體內的延遲破壞

  • 淺岡憲三
  • 德島大學研究生院健康生物科學研究部生物材料工學領域
  • 牙科材料與器械，26,334（2007）

3. Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering

  • Takahiro HIRAMATSU*1*3, Mamoru FURUTA*2*3, Hiroshi FURUTA*2*3,Tokiyoshi MATSUDA*2*3, and Takashi HIRAO*2*3
  • *1 Kochi Casio Co., Ltd., Nankoku, Kochi 783-0062, Japan *2 Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan *3 Kochi Industrial Promotion Center, Kami, Kochi 782-8502, Japan
  • Japanese Journal of Applied Physics Vol. 46, No. 6A, 2007, pp. 3319?3323

4. Diffusion properties of point defects in barium strontium titanate thin films.

  • Morito K*1, Suzuki T*1, Kishi H, Sakaguchi I*2, Ohashi N*2*3, Haneda H*2*3
  • *1)Taiyo Yuden Company Ltd.,*2)Nat. Inst. for Mater. Sci.,*3)Department of Applied Science for Electronics and Materials, Kyusyu University
  • IEEE Trans Ultrason Ferroelectrorics Freq Control. 2007 Dec;54(12):2567-73.

5. Chlorinated Nanocrystalline TiO2 Powders via One-Step Ar/O2 Radio Frequency Thermal Plasma Oxidizing Mists of TiCl3 Solution: Phase Structure and Photocatalytic Performance

  • Ji-Guang Li, Masashi Ikeda, Chengchun Tang, Yusuke Moriyoshi, Hiromi Hamanaka, and Takamasa Ishigaki
  • *1)Nano Ceramics Center, National Institute for Materials Science, *2)Department of Materials Science, Hosei University, *3)Nanoscale Materials Center, National Institute for Materials Science
  • J. Phys. Chem. C, 2007, 111 (49), pp 18018-18024

6. Internal structure transition of spin-on glass by electron beam irradiation.

  • Makoto Araki*1, Jun Taniguchi*2, Nobuo Sawada*3, Takayuki Utsumi*1 and Iwao Miyamoto*2
  • *1)Department of Electronics and Computer Science, Tokyo University of Science, *2)Department of Applied Electronics, Tokyo University of Science, *3)ESCO Ltd.
  • Applied Surface Science, 253(12), pp.5191-5195(2007)

7. Metal induced hydrogen effusion from amorphous silicon

  • Hiromasa Ohmi*1, Kiyoshi Yasutake*1, Yoshinori Hamaoka*2, and Hiroaki Kakiuchi*2
  • *1)Department of Precision Science and Technology and Research Center for Ultra Precision Science and Technology, Graduate School of Engineering, Osaka University *2)Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • Appl. Phys. Lett. 91, 241901 (2007)

2007:學會要旨

 

1. 中強度鋁合金中氫的升溫熱脫附法分析
(Assessment of the hydrogen in some medium-strength aluminum alloys)

  • 伊藤吾朗（G.Itoh）*1，鈴木智彌（T.Suzuki）*1，泉孝裕（T.Izumi）*1，伊藤伸英（N.Itoh）*1，崔祺（Q.Cui）*2，堀川修平（S.Horikawa）*3，井波隆夫（T.Inami）*4
  • *1茨城大學(Ibaraki University)、*2三菱鋁(株)(Mitsubishi Aluminum Company，Ltd.)、*3電子科學(株)(ESCO，Ltd.)、*4(社)日本鋁協會(Japan Aluminium Association)
  • 日本輕金屬學會主辦的第112屆春季講座大會（The 112th Conference of Japan Institute of Light Metals by The Japan Institute of Light Metals）

2. 通過升溫脫附法調查純鋁中氫陷阱狀態
(Thermal desorption spectroscopy study on the hydrogen trapping states in a pure aluminum.)

  • 伊藤吾朗1，泉孝裕1，堀川修平2
  • *1茨城大學（Ibaraki University），*2電子科學（ESCO，Ltd.）
  • （社）日本輕金屬學會主辦的第113回秋季講座大會（The 113th Conference of Japan Institute of Light Metals by The Japan Institute of Light Metals）

3. Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS

  • Ziyuan Liu*1, Shinji Fujieda*2, Fumihiko Hayashi*3, Masakuni Shimizu*3, Masashi Nakata*3,Hirokazu Ishigaki*3,Markus Wilde*4, and Katsuyuki Fukutan*4
  • *1Test and Analysis Engineering Division, NEC Electronics Croporation, *2 System Devices Research Laboratories, NEC Corporation, *3 2nd Microcomputer Division, NEC Electronics Croporation, *4Institute of Industrial Science, University of Tokyo
  • 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM:3A.6_190-196

4.6061塑性加工對鋁合金中氫存在狀態的影響
(Effect of plastic deformation on the states of hydrogen in a 6061 alminum alloy)

  • 伊藤吾朗（G.Itoh）*1，鈴木智彌（T.Suzuki）*1，泉孝裕（T.Izumi）*1，伊藤伸英（N.Itoh）*1，藪田均（H.Yabuta）*2
  • *1茨城大學(Ibaraki University)、*2(社)日本鋁協會(Japan Aluminium Association)
  • （社）日本輕金屬學會主辦的第113回秋季講座大會（The 113th Conference of Japan Institute of Light Metals by The Japan Institute of Light Metals）

5. Damage-free Etching Processes of Low Dielectric (Low-k) Films Using the Neutral Beam

  • 寒川誠二*1，陣內佛霖*1
  • *1東北大學流體科學研究所
  • Materials Research Society 2007 SPRING MEETING

6. Hydrogen Degradation Property of Electrochemically Charged Aluminum.

  • Hiroshi Suzuki, Daisuke Kobayashi, Kenichi Takai and Yukito Hagihara
  • 上智大學理工學部機能創造理工學科
  • Materials Research Society 2007 FALL MEETING

2006:論文・雜誌・書籍

 

1. P-type activation of AlGaN by hydrogen desorption using catalytic Ni films

  • T.Naono*1,H.Fujioka*2,J.Okabayashi*3,M.Oshima*3,H.miki*4
  • *1)Department of Applied Chemistry,The University of Tokyo, *2)Institute of Industrial Science,The University of Tokyo and Kanagawa Academy of Science and Technology, *3)Department of Applied Chemistry,The University of Tokyo, *4)Showa Denko KK
  • APPLIED PHYSICS LETTERS,88(15),152114(2006)

2. Modeling Thermal Desorption Analysis of Hydrogen in Steel

  • M.Enomoto*1, D.Hirakami*2, T.Tarui*2
  • *1 Department of Materials Science and Engineering, Ibaraki University, Hitachi 316-8511 Japan *2 Stell Research Laboratories, Nippon Steel Corporation, Chiba 293-8511 Japan
  • ISIJ International, Vol46(2006),No.9pp.1381-1387

3. Step-wise decomposition process of azobenzene self-assembled monolayers

  • M. Onoue*1, M.R. Han*1, E. Ito*1 and M. Hara*1*2
  • *1)Local Spatio-Temporal Functions Laboratory, Frontier Research System, RIKEN, *2)Interdisciplinary School of Science and Engineering, Tokyo Institute of Technology
  • Surface Science, 600(18), pp.3999-4003(2006)

4. Urea Coordinated Titanium Trichloride TiIII[OC(NH)2]6Cl3: A Single Molecular Precursor Yielding Highly Visible Light Responsive TiO2 Nanocrystallites

  • Ji-Guang Li, Xiaojing Yang, and Takamasa Ishigaki
  • *1)National Institute for Materials Science, Nano Ceramics Center, *2)National Institute for Materials Science, Advanced Materials Laboratory, *3)College of Chemistry, P.O. Box S-46, Beijing Normal University
  • J. Phys. Chem. B, 2006, 110 (30), pp 14611-14618

5. Thermal-desorption induced enhancement and patterning of ultraviolet emission in chemically grown ZnO

  • Rongguo Xie*1*2, Dongsheng Li*1, Deren Yang*1*4, Takashi Sekiguchi*2 and Minhua Jiang*1*3
  • *1)State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China, *2)Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba 305-0047, Japan, *3)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China ,*4)Author to whom any correspondence should be addressed
  • Nanotechnology 17(2006)2789-2793

6. Temperature programmed desorption of F-doped SnO2 films deposited by inverted pyrosol technique

  • S. Aukkaravittayapun*1, C. Thanachayanont*1, T. Theapsiri*2, W. Veerasai*2, Y. Sawada*3, T. Kondo*3, S. Tokiwa*4 and T. Nishide*4
  • *1)National Metal and Materials Technology Center (MTEC), *2)Department of Chemistry, Faculty of Science, Mahidol University, *3)Department of Industrial Chemistry, Graduate School of Engineering, Tokyo Polytechnic University, *4)Department of Materials Chemistry and Engineering, College of Nihon University
  • Journal of Thermal Analysis and Calorimetry, Vol. 85 (2006) 3, 811-815

7. Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

  • Tatsuro Maeda*1, Tetsuji Yasuda*1, Masayasu Nishizawa*1, Noriyuki Miyata*1, Yukinori Morita*1, Shinichi Takagi*1*2
  • *1)MIRAI Project, ASRC-AIST, *2)The University of Tokyo
  • JOURNAL OF APPLIED PHYSICS 100,014101 (2006)

8. Solution-processed silicon films and transistors

  • Tatsuya Shimoda*1, Yasuo Matsuki*2, Masahiro Furusawa*1, Takashi Aoki*1, Ichio Yudasaka*1, Hideki Tanaka*1, Haruo Iwasawa*2, Daohai Wang*2, Masami Miyasaka*1, Yasumasa Takeuchi*2
  • *1)Technology Platform Research Center, Seiko Epson Corporation, *2)Fine Electronic Research Laboratories, JSR Corporation
  • Nature LETTERS, Vol.440, 6 April 2006, doi;10.1038/nature04613

2006:學會要旨

1. 純鈦中固溶氫和氫化物的狀態分離和脆化·恢復行為動

  • 桐原望、山田纮樹、鈴木啟史、高井健一、萩原行人
  • 上智大學理工學部機能創造理工學科
  • 第138回日本金屬學會講演概要（2006春季）:J1

2. 噻吩硫醇自組裝單分子膜在Au（111）上的吸附狀態

  • 伊藤英輔*1,Jaegeun Noh*2,原正彥*1,*3
  • *1（獨）理化學研究所局部時空，*2漢陽大學化學，*3東工大綜合理工
  • 第53屆應用物理學聯合講座（2006春季）24p-N-8

3. 氮化硼碳(BCN)薄膜隨水分的特性變化

  • 志摩秀和、木村千春、青木秀充、杉野隆
  • 大阪大學研究生院工學研究科
  • 第53屆應用物理學聯合講座（2006春季）24a-Q-9

4. Effect of Surface Oxide Films on Degradation of Titanium

  • 淺岡憲三*1，前島邦光*2
  • *1 德島大學大學院健康生物科學研究部，*2電子科學（株）
  • THERMEC'2006 International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS:SESSION E5: TITANIUM ALLOYS & AEROSPACE STRUCTURAL METALLIC MATERIALS

5. Surface Passivation Properties of Stacked Doped PECVD a-Si:H Layers for Hetero-Structure c-Si Solar Cells.

  • Stefaan De Wolf Michio Kondo
  • Res. Center for Photovoltaics, Nat. Inst. of Adv. Ind. Sci. & Technol.
  • 4th World Conference on Photovoltaic Energy Conversion, pp.1469-1472(2006)

2005:論文・雜誌・書籍

1. 氧氣氣氛下的氫氧磷灰石的燒制

  • 石川剛
  • 賓得（株）新陶瓷事業部開發部
  • J. Ceram. Soc. Japan, 113,788(2005)

2. 通過升溫脫附分析對鈦的侵蝕氧化膜的作用的評價

  • 淺岡憲三*1，前島邦光*2
  • *1 德島大學大學院健康生物科學研究部生物材料工學領域，*2電子科學株式會社
  • 牙科材料和器械，24,439（2005）

3. Temperature Dependence of Porogen Desorption from Low-k Porous Silica Filmes Incorporated with Ethylene Groups

  • Yasutaka UCHIDA, Yoshiyuki MARUYAMA, Tomohiro KATOH, Yoshito ITO and Koichi ISHIDA
  • Department of Media Science, Faculty of Science and Technology, Teikyo University of Science and Technology
  • Jpn. J. Appl. Phys., 44,2316(2005)

4. 含有乙烯基的多孔二氧化矽膜的空孔評價

  • 內田恭敬*1，大平俊行*2，鈴木良一*2，丸山喜之*1，加藤智博*1，石田宏一*1
  • *1 帝京科學大學理工學部，*2產業技術綜合研究所計量前沿研究部門
  • 信學技報TECHNICAL REPORT OF IEICE.SDM2004-238.17（2007）

5. Interstitial oxygen molecules in amorphous SiO2. I. Quantitative concentration analysis by thermal desorption, infrared photoluminescence, and vacuum-ultraviolet optical absorption

  • Koichi Kajihara*1, Masahiro Hirano*1, Motoko Uramoto*2, Yukihiro Morimoto*2, Linards Skuja*3, Hideo Hosono*4
  • *1 Tokyo Institute of Technology, *2Research and Development Center, Ushio Inc., *3Institute of Solid State Physics, University of Latvia *4Materials and Structures Laboratory and Frontier Collaborative Research Center
  • J. Appl. Phys. 98, 013527 (2005); DOI:10.1063/1.1943504 Published 11 July 2005

2005:學會要旨

1. 使用TDS分析SOG的電子束曝光機理

  • 荒木真*1，谷口淳*2，宮本巖男*2，澤田信雄*3
  • *1 東京理科大學基礎工學研究科電子應用工學專業，*2東京理科大學基礎工學部電子應用工學專業，*3電子科學（株）
  • 2005年度精密工學會春季大會，

2. 鈦氧化膜和氫的升溫脫附行為

  • 淺岡憲三*1，前島邦光*2
  • *1 德島大學生物材料，*2電子科學（株）
  • 第27屆日本生物材料學會(2005):B-405

3. 基于具有偶氮苯基的二硫醇分子SAM的TDS及XPS的熱穩定性評價

  • 尾上美紀*1，Mina Han*1，伊藤英輔*1，原正彥*1，*2
  • *1 理研局部時空機能，*2東工大綜合理工
  • 第52屆應用物理學聯合講座（2005）：29p-YB-9

4. 鈦的侵蝕和氧化被膜的作用

  • 淺岡憲三*1，前島邦光*2，瀨崎英孝*3
  • *1 德島大學·生物材料，*2電子科學（株），*3德島大學·工·機械
  • 第45屆日本牙科理工學會學術演講會(2005):A-13
  • 牙科材料·器械，載于24（2），79（2005）

5. 含有乙烯基的多孔二氧化矽膜的空孔評價

  • 內田恭敬*1，大平俊行*2，鈴木良一*2，丸山喜之*1，加藤智博*1，石田宏一*1
  • *1 帝京科學大學理工學部，*2產業技術綜合研究所計量前沿研究部門
  • 應用物理學會矽技術分科會要旨集，16（2005）

6. Application of Gold-Tin Solder Paste for Fine Parts and Devices

  • Masayuki Ishikawa, Hayato Sasaki, *Satoko Ogawa, Masayoshi Kohinata, Akifumi Mishima, Hideaki Yoshida
  • Development Section, Sanda Plant, Advanced Products Strategic Company, Mitsubishi Materials Corporation
  • 2005 Electronic Components and Technology Conference, 701
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