2005～2009 - ESCO | 電子科学株式会社

2009：論文･雑誌･本

1.Existing states of hydrogen in steels including various structural factors - experimental approach -
（各種組織因子を含んだ鋼中水素の存在状態解析に関する実験的研究）

• 高井健一*1,鈴木啓史*1
• *1上智大学理工学部
• 2009年 第1回 鉄鋼材料の革新的高強度・高機能化基板研究開発プロジェクト シンポジウム講演予稿集

2.Detection of hydrogen in neutron-irradiated nickel using positron lifetime spectroscopy

• C.He*1,T.Yoshiie*1,Q.Xu*1,K.Sato*1,S.Peneva*2,T.D.Troev*2
• *1 Research Reactor Institute,Kyoto University *2 Institute for Nuclear Research and Nuclear Energy
• Philosophia Magazine(Eng.), Vol89, No.14, 11 May 2009, 1183-1195

3.Suppression of Cu Oxidation Using Environmentally Friendly Inhibitors under Conditions of High Temperature and High Humidity for Cu/Low-k

• Makoto Hara, Daisuke Watanabe, Chiharu Kimura, Hidemitsu Aoki, and Takashi Sugino
• *Division of Electrical, Electronic and Information Engineering, Osaka University
• Jpn. J. Appl. Phys. 48 (2009) 04C016 (4 pages)

4.Reaction Mechanism of SOFC Anode with Proton Conductor BCY
（プロトン伝導体BCY添加SOFC燃料極の反応機構）

• *Kohei Masuda, Katsunori Hanamura
• Research Center for Carbon Recycling and Energy, Tokyo Institute of Technology
• 第18回SOFC研究発表会講演要旨集(159C)

5.High-Quality SiO₂ Film Formation below 400℃ by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas

• Hirokazu Ueda, Yusuke Ohsawa, Yoshinobu Tanaka, Toshihisa Nozawa
• Tokyo Electron Technology Development Lnstitute Inc.
• Japanese Journal of Applied Physics 48(2009)

6.Improvement of Dielectric Properties on Deposited Sio2 Caused by Stress Relaxation with Thermal Annealing

• Mitsuru Sometani*1, Ryu Hasunuma*1*2, Masaaki Ogino*3, Hitoshi Kuribayashi*3, Yoshiyuki Sugahara*3, Kikuo Yamabe*1*2
• *1)Institute of Applied Physics, University of Tsukuba
• *2)Tsukuba Research Center for Interdisciplinay Materials Science(TIMS), University of Tsukuba
• *3)Semiconductor Process R&D Sectioin, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co.,Ltd.,
• Japanese Journal of Applied Physics 48(2009)

7.Study on thermal stability of Li1-x(NiaMnbCoc)O2
（Ni-Mn-Co 三元系正極材料の熱安定性の検討）

• 小西宏明, 湯浅豊隆, 吉川正則, 平野辰巳, 寺田尚平, 高松大郊,
• 日立製作所 日立研究所
• 第50回電池討論会 (Nov.30-Dec.2, 2009)

8.Nature of doped a-Si: H/ c-Si interface recombination

• Stefaan De Wolf*1, Michio Kondo*2
• *1)Ecole Polytechnique Federale de Lausanne (EPFL), Photovoltaics and Thin Film Electronics Laboratory, *2)National Institute of Advanced Industrial Science and Technology (AIST)
• JOURNAL OF APPLIED PHYSICS 105, 103707 (2009)

9.Porous Carbon Obtained by Carbonization of PET Mixed with Basic Magnesium Carbonate: Pore Structure and Pore Creation Mechanism

• Jacek Przepiorski*1, Justyna Karolczyk*1, Kazuhiro Takeda*2, Tomoki Tsumura*2, Masahiro Toyoda*2 and Antoni W. Morawski*1
• *1)Institute of Chemical and Environmental Engineering, West Pomeranian University of Technology,　*2)Faculty of Engineering, Oita University
• Ind. Eng. Chem. Res., 2009, 48 (15), pp 7110-7116

2009：学会要旨

1.Hydrogen Desorption Spectra using Thermal Desorption Spectrometer Detected from Low-Temperature
（低温昇温脱離分析装置を用いた水素放出スペクトル）

• (学)佐藤勇太*1,(院)藤田圭*1,鈴木啓史*1,高井健一*1,萩原行人*1,石川信行*2
• 鉄鋼材料の革新的高強度・高機能化基盤研究開発研究体(JRCM：(財)金属系材料研究開発センター) *1上智大学理工学部　*2JFE スチール株式会社 スチール研究所
• 2009年　春季鉄鋼協会学会大会要旨（水素脆化）CAMP-ISIJ Vol.22(2009)-599

2008：論文･雑誌･本

1.LaAlO₃ gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate

• Masamichi Suzuki, Takeshi Yamaguchi, Noburu Fukushima, Masato Koyama
• Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
• J. Appl. Phys. 103, 034118 (2008); DOI:10.1063/1.2838470 Published 15 February 2008

2.Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

• Saburo Uchida*1, Seigo Takashima*1, Masaru Hori*1, Masanaga Fukasawa*1, Keiji Ohshima*2, Kazunori Nagahata*2, Tetsuya Tatsumi*2
• *1Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University,
• 2Process Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation
• J. Appl. Phys. 103, 073303 (2008); DOI:10.1063/1.2891787 Published 7 April 2008

3.Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition

• Yoshitaka Nagasato, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa
• Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology
• Japanese Journal of Applied Physics Vol. 47, No. 1, 2008, pp. 31-34

4.Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

• Tatsunori Murata, Kazushi Kono, Yoshikazu Tsunemine, Masahiko Fujisawa, Masazumi Matuura, Koyu Asai, Masayuki Kojima
• Process Technology Development Division, Renesas Technology Corporation
• Japanese Journal of Applied Physics Vol. 47, No. 4, 2008, pp. 2488-2491

5.Hydrogen Interaction with Single-Walled Carbon Nanotubes

• Kumiko Yoshihara, Kazuhiro Ishida, Winadda Wongwiriyapan, Satoshi Inoue, Yusuke Okabayashi,Shin-ichi Honda, Yoshihiro Nishimoto*1, Yuji Kuwahara1, Kenjiro Oura*2, and Mitsuhiro Katayama
• Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University,
• *1Division of Precision Science and Technology and Applied Physics, Graduate School of Engineering, Osaka University, *2Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University,
• Applied Physics Express 1 (2008) 094001, May 15, 2008; accepted July 26, 2008; published online August 22, 2008

6.Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O₂ annealing

• Kenji Nomura*1, Toshio Kamiya*1*2, Hiromichi Ohta*1, Masahiro Hirano*1*3, Hideo Hosono*1*2*3,
• *1)ERATO-SORST, JST, in Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, *2)Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, *3)Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology,
• APPLIED PHYSICS LETTERS 93, 192107 2008

7.Hydrogen desorption effect on cathodoluminescence of ZnO

• B.Dierre*1*2, X.L. Yuan*1, T. Ishigaki*3, K. Ueda*4 and T. Sekiguchi*1*2
• *1)Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), *2)Graduate School of Pure and Applied Sciences, University of Tsukuba, *3)Nano Ceramics Center, National Institute for Materials Science (NIMS), *4)Nano High-Tech Research Center, Graduate School of Engineering, Toyota Technological Institute
• Superlattices and Microstructures, Volume 45, Issue 4-5, p. 321-325(2008)

8.Approach for detecting localization of inkjet ink components using dynamic-SIMS analysis

• Masaya Shibatani*1*2, Tsutomu Asakawa*3, Toshiharu Enomae*1, Akira Isogai*1
• *1)Paper Science Laboratory,Graduate School of Agricultural and Life Sciences,The University of Tokyo, *2)IJ Industrial Applications R&D Department,Production Engineering &Development Div.,Seiko Epson Corporation,
• *3)Material Analysis &Research Center,R&D Department,Seiko Epson Corporation,Japan
• Colloids and Surfaces A:Physicochem.Eng.Aspects 326 (2008)61 ‐66

9.In-Line Wafer Level Hermetic Packages for MEMS Variable Capacitor

• Susumu Obata*1, Michinobu Inoue*1, Takeshi Miyagi*1, Ikuo Mori*1,Yoshiaki
• Sugizaki*2,Yoshiaki Shimooka*2, Akihiro Kojima*2, Mitsuyoshi Endo*2, Hideki Shibata*2
• *1)Corporate Manufacturing Engineering Center, Toshiba Corporation.
• *2) Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation
• 2008 Electronic Components and Technology Conference (P.163)

2008：学会要旨

1.Hydrogen Desorption Spectra using Thermal Desorption Spectrometer Detected from Low-Temperature
（低温昇温脱離分析装置を用いた水素放出スペクトル）

• 佐藤勇太*1, 藤田圭*1, 鈴木啓史*1, 高井健一*1, 萩原行人*1, 前島邦光*2, 宮林延良*2
• 鉄鋼材料の革新的高強度・高機能化基盤研究開発研究体(JRCM：(財)金属系材料研究開発センター)
• *1上智大学理工学部　*2電子科学株式会社
• 2008年　秋季鉄鋼協会学会大会要旨（水素脆化）CAMP-ISIJ Vol.21(2008)-1375

2.Hydrogen evolution spectra of pure iron including various lattice defects　using low-thermal desorption spectrometry
（低温昇温脱離分析法による各種格子欠陥を有する純鉄の水素放出スペクトル）

• 藤田圭*1, 佐藤勇太*1, 鈴木啓史*1, 高井健一*1, 萩原行人*1,
• 鉄鋼材料の革新的高強度・高機能化基盤研究開発研究体(JRCM：(財)金属系材料研究開発センター) 
• *1上智大学理工学部
• 2008年　秋季鉄鋼協会学会大会要旨（水素脆化）CAMP-ISIJ Vol.21(2008)-1376

3.Understanding of Passivation Mechanism in Heterojunction c-Si Solar Cells

• Michio Kondo*1, Stefaan De Wolf*1*2, and Hiroyuki Fujiwara*1
• *1)RCPV, AIST, Umezono, Tsukuba, 305-8568, Japan, *2)Institute of Microtechnique, University of Neuchatel
• Mater. Res. Soc. Symp. Proc. Vol.1066, 2008 Materials Research Society, 1066-A03-01

2007：論文･雑誌･本

1.Internal structure transition of spin-on glass by electron beam irradiation

• Makoto Araki*1, Jun Taniguchi*2, Nobuo Sawada*3, Takayuki Utsumi*1, Iwao Miyamoto*2
• *1 Department of Electronics and Computer Science,Tokyo University of Science, *2 Department of Applied Electronics,Tokyo University of Science, *3 ESCO Ltd.
• Applied Surface Science,253,5191-5195(2007)

2.チタンのキャラクタリゼーションと生体内での遅れ破壊

• 浅岡憲三
• 徳島大学大学院ヘルスバイオサイエンス研究部生体材料工学分野
• 歯科材料・器械, 26,334(2007)

3.Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering

• Takahiro HIRAMATSU*1*3, Mamoru FURUTA*2*3, Hiroshi FURUTA*2*3,Tokiyoshi MATSUDA*2*3, and Takashi HIRAO*2*3
• *1 Kochi Casio Co., Ltd., Nankoku, Kochi 783-0062, Japan *2 Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan *3 Kochi Industrial Promotion Center, Kami, Kochi 782-8502, Japan
• Japanese Journal of Applied Physics Vol. 46, No. 6A, 2007, pp. 3319?3323

4.Diffusion properties of point defects in barium strontium titanate thin films.

• Morito K*1, Suzuki T*1, Kishi H, Sakaguchi I*2, Ohashi N*2*3, Haneda H*2*3
• *1)Taiyo Yuden Company Ltd.,*2)Nat. Inst. for Mater. Sci.,*3)Department of Applied Science for Electronics and Materials, Kyusyu University
• IEEE Trans Ultrason Ferroelectrorics Freq Control. 2007 Dec;54(12):2567-73.

5.Chlorinated Nanocrystalline TiO2 Powders via One-Step Ar/O2 Radio Frequency Thermal Plasma Oxidizing Mists of TiCl3 Solution: Phase Structure and Photocatalytic Performance

• Ji-Guang Li, Masashi Ikeda, Chengchun Tang, Yusuke Moriyoshi, Hiromi Hamanaka, and Takamasa Ishigaki
• *1)Nano Ceramics Center, National Institute for Materials Science, *2)Department of Materials Science, Hosei University, *3)Nanoscale Materials Center, National Institute for Materials Science
• J. Phys. Chem. C, 2007, 111 (49), pp 18018-18024

6.Internal structure transition of spin-on glass by electron beam irradiation.

• Makoto Araki*1, Jun Taniguchi*2, Nobuo Sawada*3, Takayuki Utsumi*1 and Iwao Miyamoto*2
• *1)Department of Electronics and Computer Science, Tokyo University of Science, *2)Department of Applied Electronics, Tokyo University of Science, *3)ESCO Ltd.
• Applied Surface Science, 253(12), pp.5191-5195(2007)

7.Metal induced hydrogen effusion from amorphous silicon

• Hiromasa Ohmi*1, Kiyoshi Yasutake*1, Yoshinori Hamaoka*2, and Hiroaki Kakiuchi*2
• *1)Department of Precision Science and Technology and Research Center for Ultra Precision Science and Technology, Graduate School of Engineering, Osaka University *2)Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
• Appl. Phys. Lett. 91, 241901 (2007)

2007：学会要旨

 

1.昇温脱離法による中強度アルミニウム合金中の水素の解析
（Assessment of the hydrogen in some medium-strength aluminum alloys）

• 伊藤吾朗(G.Itoh)*1, 鈴木智弥(T.Suzuki)*1, 泉孝裕(T.Izumi)*1, 伊藤伸英(N.Itoh)*1, 崔祺(Q.Cui)*2, 堀川修平(S.Horikawa)*3, 井波隆夫(T.Inami)*4
• *1茨城大学(Ibaraki University), *2三菱アルミニウム(株)(Mitsubishi Aluminum Company, Ltd.), *3電子科学(株)(ESCO,Ltd.), *4(社)日本アルミニウム協会(Japan Aluminium Association)
• (社)軽金属学会主催 第112回春期講演大会(The 112th Conference of Japan Institute of Light Metals by The Japan Institute of Light Metals)

2.昇温脱離法による純アルミニウム中の水素のトラップ状態の調査
（Thermal desorption spectroscopy study on the hydrogen trapping states in a pure aluminum.）

• 伊藤吾朗(G.Itoh)*1, 泉孝裕(T.Izumi)*1, 堀川修平(S.Horikawa)*2
• *1茨城大学(Ibaraki University), *2電子科学(株)(ESCO,Ltd.)
• (社)軽金属学会主催 第113回秋期講演大会(The 113th Conference of Japan Institute of Light Metals by The Japan Institute of Light Metals)

3.Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS

• Ziyuan Liu*1, Shinji Fujieda*2, Fumihiko Hayashi*3, Masakuni Shimizu*3, Masashi Nakata*3,Hirokazu Ishigaki*3,Markus Wilde*4, and Katsuyuki Fukutan*4
• *1Test and Analysis Engineering Division, NEC Electronics Croporation, *2 System Devices Research Laboratories, NEC Corporation, *3 2nd Microcomputer Division, NEC Electronics Croporation, *4Institute of Industrial Science, University of Tokyo
• 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM:3A.6_190-196

4.6061アルミニウム合金における水素の存在状態に及ぼす塑性加工の影響
（Effect of plastic deformation on the states of hydrogen in a 6061 alminum alloy）

• 伊藤吾朗(G.Itoh)*1, 鈴木智弥(T.Suzuki)*1, 泉孝裕(T.Izumi)*1, 伊藤伸英(N.Itoh)*1, 薮田均(H.Yabuta)*2
• *1茨城大学(Ibaraki University), *2 (社)日本アルミニウム協会(Japan Aluminium Association)
• (社)軽金属学会主催 第113回秋期講演大会(The 113th Conference of Japan Institute of Light Metals by The Japan Institute of Light Metals)

5.Damage-free Etching Processes of Low Dielectric (Low-k) Films Using the Neutral Beam

• 寒川誠二(Seiji Samukawa)*1, 陣内佛霖(Butsurin Jinnai)*1
• *1東北大学　流体科学研究所
• Materials Research Society 2007 SPRING MEETING

6.Hydrogen Degradation Property of Electrochemically Charged Aluminum.

• Hiroshi Suzuki, Daisuke Kobayashi, Kenichi Takai and Yukito Hagihara
• 上智大学　理工学部機能創造理工学科

• Materials Research Society 2007 FALL MEETING

2006：論文･雑誌･本

1.P-type activation of AlGaN by hydrogen desorption using catalytic Ni films

• T.Naono*1，H.Fujioka*2，J.Okabayashi*3，M.Oshima*3，H.miki*4
• *1)Department of Applied Chemistry,The University of Tokyo, *2)Institute of Industrial Science,The University of Tokyo and Kanagawa Academy of Science and Technology, *3)Department of Applied Chemistry,The University of Tokyo, *4)Showa Denko KK
• APPLIED PHYSICS LETTERS,88（15）,152114(2006)

2.Modeling Thermal Desorption Analysis of Hydrogen in Steel

• M.Enomoto*1, D.Hirakami*2, T.Tarui*2
• *1 Department of Materials Science and Engineering, Ibaraki University, Hitachi 316-8511 Japan *2 Stell Research Laboratories, Nippon Steel Corporation, Chiba 293-8511 Japan
• ISIJ International, Vol46(2006),No.9pp.1381-1387

3.Step-wise decomposition process of azobenzene self-assembled monolayers

• M. Onoue*1, M.R. Han*1, E. Ito*1 and M. Hara*1*2
• *1)Local Spatio-Temporal Functions Laboratory, Frontier Research System, RIKEN, *2)Interdisciplinary School of Science and Engineering, Tokyo Institute of Technology
• Surface Science, 600(18), pp.3999-4003(2006)

4.Urea Coordinated Titanium Trichloride TiIII[OC(NH)2]6Cl3: A Single Molecular Precursor Yielding Highly Visible Light Responsive TiO2 Nanocrystallites

• Ji-Guang Li, Xiaojing Yang, and Takamasa Ishigaki
• *1)National Institute for Materials Science, Nano Ceramics Center, *2)National Institute for Materials Science, Advanced Materials Laboratory, *3)College of Chemistry, P.O. Box S-46, Beijing Normal University
• J. Phys. Chem. B, 2006, 110 (30), pp 14611-14618

5.Thermal-desorption induced enhancement and patterning of ultraviolet emission in chemically grown ZnO

• Rongguo Xie*1*2, Dongsheng Li*1, Deren Yang*1*4, Takashi Sekiguchi*2 and Minhua Jiang*1*3
• *1)State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China, *2)Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba 305-0047, Japan, *3)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China ,*4)Author to whom any correspondence should be addressed
• Nanotechnology 17(2006)2789-2793

6.Temperature programmed desorption of F-doped SnO2 films deposited by inverted pyrosol technique

• S. Aukkaravittayapun*1, C. Thanachayanont*1, T. Theapsiri*2, W. Veerasai*2, Y. Sawada*3, T. Kondo*3, S. Tokiwa*4 and T. Nishide*4
• *1)National Metal and Materials Technology Center (MTEC), *2)Department of Chemistry, Faculty of Science, Mahidol University, *3)Department of Industrial Chemistry, Graduate School of Engineering, Tokyo Polytechnic University, *4)Department of Materials Chemistry and Engineering, College of Nihon University
• Journal of Thermal Analysis and Calorimetry, Vol. 85 (2006) 3, 811-815

7.Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

• Tatsuro Maeda*1, Tetsuji Yasuda*1, Masayasu Nishizawa*1, Noriyuki Miyata*1, Yukinori Morita*1, Shinichi Takagi*1*2
• *1)MIRAI Project, ASRC-AIST, *2)The University of Tokyo
• JOURNAL OF APPLIED PHYSICS 100,014101 (2006)

8.Solution-processed silicon films and transistors

• Tatsuya Shimoda*1, Yasuo Matsuki*2, Masahiro Furusawa*1, Takashi Aoki*1, Ichio Yudasaka*1, Hideki Tanaka*1, Haruo Iwasawa*2, Daohai Wang*2, Masami Miyasaka*1, Yasumasa Takeuchi*2
• *1)Technology Platform Research Center, Seiko Epson Corporation, *2)Fine Electronic Research Laboratories, JSR Corporation
• Nature LETTERS, Vol.440, 6 April 2006, doi;10.1038/nature04613

2006：学会要旨

1.純チタン中の固溶水素と水素化物の状態分離と脆化・回復挙動

• 桐原望，山田紘樹，鈴木啓史，高井健一，萩原行人
• 上智大学理工学部機能創造理工学科
• 第138回日本金属学会講演概要(2006春)：J1

2.Au(111)上のチオフェンチオール自己組織化単分子膜の吸着状態

• 伊藤英輔*1，Jaegeun Noh*2，原　正彦*1,*3
• *1 （独）理化学研究所局所時空間，*2 ハンヤン大化学，*3 東工大総合理工
• 第53回応用物理学関係連合講演会(2006春)：24p-N-8

3.水分による窒化ホウ素炭素(BCN)薄膜の特性変化

• 志摩秀和，木村千春，青木秀充，杉野隆
• 大阪大学大学院工学研究科
• 第53回応用物理学関係連合講演会(2006春)：24a-Q-9

4.Effect of Surface Oxide Films on Degradation of Titanium

• 淺岡憲三*1，前島邦光*2
• *1 徳島大学大学院ヘルスバイオサイエンス研究部， *2電子科学（株）
• THERMEC'2006 International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS：SESSION E5: TITANIUM ALLOYS & AEROSPACE STRUCTURAL METALLIC MATERIALS

5.Surface Passivation Properties of Stacked Doped PECVD a-Si:H Layers for Hetero-Structure c-Si Solar Cells.

• Stefaan De Wolf Michio Kondo
• Res. Center for Photovoltaics, Nat. Inst. of Adv. Ind. Sci. & Technol.
• 4th World Conference on Photovoltaic Energy Conversion, pp.1469-1472(2006)

2005：論文･雑誌･本

1.酸素雰囲気下での水酸アパタイトの焼成

• 石川剛
• ペンタックス(株) ニューセラミックス事業部 開発部
• J. Ceram. Soc. Japan, 113,788(2005)

2.昇温脱離分析によるチタンの侵食に対する酸化膜の働きの評価

• 浅岡憲三*1, 前島邦光*2
• *1 徳島大学大学院ヘルスバイオサイエンス研究部生体材料工学分野, *2 電子科学株式会社
• 歯科材料・器械, 24,439(2005)

3.Temperature Dependence of Porogen Desorption from Low-k Porous Silica Filmes Incorporated with Ethylene Groups

• Yasutaka UCHIDA, Yoshiyuki MARUYAMA, Tomohiro KATOH, Yoshito ITO and Koichi ISHIDA
• Department of Media Science, Faculty of Science and Technology, Teikyo University of Science and Technology
• Jpn. J. Appl. Phys., 44,2316(2005)

4.エチレン基含有ポーラスシリカ膜の空孔評価

• 内田恭敬*1, 大平俊行*2, 鈴木良一*2, 丸山喜之*1, 加藤智博*1, 石田宏一*1
• *1 帝京科学大学理工学部, *2 産業技術総合研究所計測フロンティア研究部門
• 信学技報 TECHNICAL REPORT OF IEICE.SDM2004-238.17(2007)

5.Interstitial oxygen molecules in amorphous SiO₂. I. Quantitative concentration analysis by thermal desorption, infrared photoluminescence, and vacuum-ultraviolet optical absorption

• Koichi Kajihara*1, Masahiro Hirano*1, Motoko Uramoto*2, Yukihiro Morimoto*2, Linards Skuja*3, Hideo Hosono*4
• *1 Tokyo Institute of Technology, *2Research and Development Center, Ushio Inc., *3Institute of Solid State Physics, University of Latvia *4Materials and Structures Laboratory and Frontier Collaborative Research Center
• J. Appl. Phys. 98, 013527 (2005); DOI:10.1063/1.1943504 Published 11 July 2005

2005：学会要旨

1.TDSを用いたSOGの電子ビーム露光メカニズムの解析

• 荒木真*1，谷口淳*2，宮本岩男*2，沢田信雄*3
• *1 東京理科大学 基礎工学研究科 電子応用工学専攻, *2 東京理科大学 基礎工学部 電子応用工学科, *3電子科学(株)
• 2005年度精密工学会春季大会

2.チタン酸化膜と水素の昇温脱離挙動

• 浅岡憲三*1, 前島邦光*2
• *1 徳島大・生体材料, *2 電子科学(株)
• 第27回 日本バイオマテリアル学会大会(2005)：B-405

3.アゾベンゼン基をもつジチオール分子SAMのTDS及びXPSによる熱安定性評価

• 尾上美紀*1，Mina Han*1，伊藤英輔*1，原正彦*1,*2
• *1 理研局所時空間機能，*2 東工大総合理工
• 第52回 応用物理学関係連合講演会(2005)：29p-YB-9

4.チタンの侵食と酸化被膜の働き

• 浅岡憲三*1, 前島邦光*2, 瀬崎英孝*3
• *1 徳島大・生体材料, *2 電子科学(株), *3 徳島大・工・機械
• 第45回 日本歯科理工学会学術講演会(2005)：A-13
• 歯科材料・器械, 24(2),79(2005)に掲載

5.エチレン基含有ポーラスシリカ膜の空孔評価

• 内田恭敬*1, 大平俊行*2, 鈴木良一*2, 丸山喜之*1, 加藤智博*1, 石田宏一*1
• *1 帝京科学大学理工学部, *2 産業技術総合研究所計測フロンティア研究部門
• 応用物理学会シリコンテクノロジー分科会要旨集,16(2005)

6.Application of Gold-Tin Solder Paste for Fine Parts and Devices

• Masayuki Ishikawa, Hayato Sasaki, *Satoko Ogawa, Masayoshi Kohinata, Akifumi Mishima, Hideaki Yoshida
• Development Section, Sanda Plant, Advanced Products Strategic Company, Mitsubishi Materials Corporation
• 2005 Electronic Components and Technology Conference, 701